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RB411VA-50
Diodes
Schottky barrier diode
RB411VA-50
Applications General rectification External dimensions (Unit : mm)
0.170.1 0.05 1.30.05
Land size figure (Unit : mm)
1.1
1.90.1
2.50.2
TUMD2
Construction Silicon epitaxial planar
0.80.05
Structure
ROHM : TUMD2 0.1 dot (year week factory) + day
0.60.2
Taping specifications (Unit : mm)
4.00.1 2.00.05 1.750.1 1.550.1 0 0.250.05
3.50.05
8.00.2
1.430.05
4.00.1
1.00.2 0
2.75
2.80.05
0.90.08
Absolute maximum ratings (Ta=25C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak 60Hz1cyc Junction temperature Storage temperature Electrical characteristics (Ta=25C) Parameter Symbol VF1 Forawrd voltage VF2 IR Reverse current Capacitance between terminals Ct Symbol VRM VR Io IFSM Tj Tstg Limits 50 20 0.5 3 125 -40 to +125 Unit V V A A
Min. -
Typ. 20
Max. 0.50 0.30 30 -
Unit V V A pF
IF=500mA IF=10mA VR=10V VR=10V , f=1MHz
0.8 0.5
Features 1) Small mold type. (TUMD2) 2) High reliability.
2.0
Conditions
1/3
RB411VA-50
Diodes
Electrical characteristic curves (Ta=25C)
1000 Ta=25 Ta=75 10000 1000 100 Ta=25 10 1 0.1 0 100 200 300 400 500 0 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 10 20 30 40 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 50 Ta=-25 Ta=125 100 f=1MHz
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(uA)
100
Ta=125 Ta=-25
10
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
Ta=75
10
1
0.1
1 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS
460
240
100
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(uA)
450 440 430 420 410
AVE:405.6mV :3.0258mV
FORWARD VOLTAGE:VF(mV)
Ta=25 IF=500mA n=30pcs
230 220 210 200 AVE:213.2mV 190
Ta=25 IF=10mA n=30pcs
90 80 70 60 50 40 30 20 10 0 AVE:5.76uA
Ta=25 VR=10V n=30pcs
AVE:432.1mV
VF DISPERSION MAP
VF DISPERSION MAP
IR DISPERSION MAP
25 24
20
30
RESERVE RECOVERY TIME:trr(ns)
PEAK SURGE FORWARD CURRENT:IFSM(A)
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
23 22 21 20 19 18 17 16 15 Ct DISPERSION MAP AVE:19.41pF
Ta=25 f=1MHz VR=0V n=10pcs
Ifsm 15
1cyc 8.3ms
25 20 15 10 5 AVE:6.20ns 0
Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs
10
5 AVE:6.30A 0 IFSM DISRESION MAP
trr DISPERSION MAP
10
15 Ifsm 8.3ms 8.3ms 1cyc
1000
TRANSIENT THAERMAL IMPEDANCE:Rth (/W)
PEAK SURGE FORWARD CURRENT:IFSM(A)
PEAK SURGE FORWARD CURRENT:IFSM(A)
Ifsm t 10
Rth(j-a) 100 Rth(j-c)
Mounted on epoxy board
5
5
10
IM=1mA
IF=100mA
1ms
time
300us
0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100
0 0.1 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS 1 1000
1 0.001
0.01
0.1
1
10
100
1000
TIME:t(s) Rth-t CHARACTERISTICS
2/3
RB411VA-50
Diodes
0.5 0.4 D=1/2 0.3 Sin(180) 0.2 0.1 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS 1.5 DC 0.5 0.4 1.5
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
0A 0V 1 DC D=1/2 0.5 Sin(180) 0
Io t T VR D=t/T VR=25V Tj=125
REVERSE POWER DISSIPATION:PR (W)
FORWARD POWER DISSIPATION:Pf(W)
0.3 0.2 0.1 0 0 10 20 30 40 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 50 D=1/2 DC Sin(180)
0
25 50 75 100 AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta)
125
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
0A 0V 1 DC D=1/2 0.5 Sin(180) 0 0 25 50
Io t T VR D=t/T VR=25V Tj=125
75
100
125
CASE TEMPARATURE:Tc() Derating Curve(Io-Tc)
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1

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